| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10 LEAD FLATPACK (FB) |
Package Outlines |
Intersil |
| 2 |
1241CBU |
OC-12/STM-4 uncooled laser transmitter. Average output power (dBM): -15(min),-11(typ),-8(max). Center wavelengrh(nm): 1274(min),1356(max). Connector SC. |
Agere Systems |
| 3 |
14 LEAD CERAMIC(DD) |
PACKAGE OUTLINES |
Intersil |
| 4 |
14 LEAD CERDIP(JD) |
PACKAGE OUTLINES |
Intersil |
| 5 |
14 LEAD FLATPACK(FD-1) |
PACKAGE OUTLINES |
Intersil |
| 6 |
14 LEAD FLATPACK(FD-2) |
PACKAGE OUTLINES |
Intersil |
| 7 |
14 LEAD PLASTIC(PD) |
PACKAGE OUTLINES |
Intersil |
| 8 |
16 LEAD CERAMIC(DE) |
PACKAGE OUTLINES |
Intersil |
| 9 |
16 LEAD CERDIP (JE) |
PACKAGE OUTLINES |
Intersil |
| 10 |
16 LEAD FLATPACK (FE2) |
PACKAGE OUTLINES |
Intersil |
| 11 |
1G-121 |
1G121 package outline |
Transitron Electronic |
| 12 |
1N3606 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 13 |
1N4153 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 14 |
21-0076B |
PACKAGE OUTLINE, SC70, 5L |
MAXIM - Dallas Semiconductor |
| 15 |
21-0109B |
PACKAGE OUTLINE, 10L uMAX, EXPOSED PAD |
MAXIM - Dallas Semiconductor |
| 16 |
21-0114 |
PACKAGE OUTLINE, 6 LEAD THIN SOT23, (LOW PROFILE) |
MAXIM - Dallas Semiconductor |
| 17 |
21-0114B |
PACKAGE OUTLINE, 6 LEAD THIN SOT23, (LOW PROFILE) |
MAXIM - Dallas Semiconductor |
| 18 |
21-0125A |
PACKAGE OUTLINE |
MAXIM - Dallas Semiconductor |
| 19 |
21-0136F |
PACKAGE OUTLINE 12,16L THIN QFN, 3x3x0.8mm |
MAXIM - Dallas Semiconductor |
| 20 |
21-0146 |
PACKAGE OUTLINE 52L TQFP, 10x10x1.0 MM |
MAXIM - Dallas Semiconductor |
| 21 |
21-0146A |
PACKAGE OUTLINE 52L TQFP, 10x10x1.0 MM |
MAXIM - Dallas Semiconductor |
| 22 |
21-0147C |
PACKAGE OUTLINE, 6L UDFN, 1.5 X 1.0 X 0.8mm |
MAXIM - Dallas Semiconductor |
| 23 |
2N2369A |
NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications |
Motorola |
| 24 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
| 25 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 26 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 27 |
2SD882 |
NPN(for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver) |
NEC |
| 28 |
310 |
Ultra Low Bias Current Varactor Bridge Operational Amplifiers |
Intronics |
| 29 |
310J |
Ultra Low Bias Current Varactor Bridge Operational Amplifiers |
Intronics |
| 30 |
311 |
Ultra Low Bias Current Varactor Bridge Operational Amplifiers |
Intronics |
| | | |
