| No. |
Part Name |
Description |
Manufacturer |
| 1 |
APTLGF140U120T |
Single Switch Intelligent Power Module - IGBT |
Advanced Power Technology |
| 2 |
GF145 |
Germanium PNP Transistor |
RFT |
| 3 |
GF145 |
Germanium PNP mesa transistor for pre-, mixer and oscillator stages up to 860MHz |
RFT |
| 4 |
GF145 |
Transistor |
RFT |
| 5 |
GF145 |
Germanium PNP MESA Transistor, mixing and oscillator stages up to 860MHz |
RFT |
| 6 |
GF145 |
Germanium PNP MESA Transistor |
RFT |
| 7 |
GF146 |
Germanium PNP Transistor |
RFT |
| 8 |
GF146 |
Germanium PNP mesa transistor for pre-, mixer and oscillator stages, up to 260MHz |
RFT |
| 9 |
GF147 |
Transistor |
RFT |
| 10 |
GF147 |
Germanium PNP MESA Transistor, for pre-mixing and oscillator stages up to 900MHz, collector isolated from the case |
RFT |
| 11 |
GF147 |
Germanium PNP Planar Transistor |
RFT |
| 12 |
MGF1402B |
MGF1402B |
Mitsumi Electric |
| 13 |
MGF1402B |
MGF1402B |
Mitsumi Electric |
| 14 |
MGF1403B |
Low Noise GaAs FET |
Mitsubishi Electric Corporation |
| 15 |
MGF1423B |
Small Signal GaAs FET |
Mitsubishi Electric Corporation |
| 16 |
STGF14NC60KD |
14 A, 600 V, short-circuit rugged IGBT |
ST Microelectronics |
| 17 |
TGF149-100A |
V(drm): 100V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 18 |
TGF149-200A |
V(drm): 200V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 19 |
TGF149-300A |
V(drm): 300V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 20 |
TGF149-400A |
V(drm): 400V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 21 |
TGF149-500A |
V(drm): 500V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 22 |
TGF149-600A |
V(drm): 600V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| | | |
