| No. |
Part Name |
Description |
Manufacturer |
| 1 |
13003BR |
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
| 2 |
2SC154C |
Silicon NPN Transistor Triple Diffused Low Temperature Passivation, intended for use in High Voltage and Wide bandwidth video power output |
Hitachi Semiconductor |
| 3 |
AEP15012 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Without indicator contact. |
Matsushita Electric Works(Nais) |
| 4 |
AEP15024 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Without indicator contact. |
Matsushita Electric Works(Nais) |
| 5 |
AEP15112 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact.. |
Matsushita Electric Works(Nais) |
| 6 |
AEP15124 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact.. |
Matsushita Electric Works(Nais) |
| 7 |
AEP15312 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: b contact. |
Matsushita Electric Works(Nais) |
| 8 |
AEP15324 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: b contact. |
Matsushita Electric Works(Nais) |
| 9 |
AEP16012 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 60A. Without indicator contact. |
Matsushita Electric Works(Nais) |
| 10 |
AEP16024 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 60A. Without indicator contact. |
Matsushita Electric Works(Nais) |
| 11 |
AEP25012 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Without indicator contact. |
Matsushita Electric Works(Nais) |
| 12 |
AEP25024 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Without indicator contact. |
Matsushita Electric Works(Nais) |
| 13 |
AEP25112 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: a contact.. |
Matsushita Electric Works(Nais) |
| 14 |
AEP25124 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: a contact.. |
Matsushita Electric Works(Nais) |
| 15 |
AEP25312 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact. |
Matsushita Electric Works(Nais) |
| 16 |
AEP25324 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact. |
Matsushita Electric Works(Nais) |
| 17 |
AUIRS2123 |
High voltage and high speed power MOSFET and IGBT drivers for Automotive applications. Output in phase with input. |
International Rectifier |
| 18 |
AUIRS2123S |
High voltage and high speed power MOSFET and IGBT drivers for Automotive applications. Output in phase with input. |
International Rectifier |
| 19 |
AUIRS2123STR |
High voltage and high speed power MOSFET and IGBT drivers for Automotive applications. Output in phase with input. |
International Rectifier |
| 20 |
AUIRS2124 |
High voltage and high speed power MOSFET and IGBT drivers for Automotive applications. Output out of phase with input |
International Rectifier |
| 21 |
AUIRS2124STR |
High voltage and high speed power MOSFET and IGBT drivers for Automotive applications. Output out of phase with input |
International Rectifier |
| 22 |
BU120 |
Silicon MESA NPN transistor, high voltage and power switching applications |
SGS-ATES |
| 23 |
IR2308 |
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package |
International Rectifier |
| 24 |
IR2308S |
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-lead SOIC package |
International Rectifier |
| 25 |
IRS21856 |
High voltage and programmable ramp slope control gate driver for MOSFET and IGBT with single high side dual mode driver and low side driver. |
International Rectifier |
| 26 |
IRS21856SPBF |
High voltage and programmable ramp slope control gate driver for MOSFET and IGBT with single high side dual mode driver and low side driver. |
International Rectifier |
| 27 |
IRS21856STRPBF |
High voltage and programmable ramp slope control gate driver for MOSFET and IGBT with single high side dual mode driver and low side driver. |
International Rectifier |
| 28 |
IRS21858 |
High voltage and programmable ramp slope control gate driver |
International Rectifier |
| 29 |
IRS21858SPBF |
High voltage and programmable ramp slope control gate driver |
International Rectifier |
| 30 |
IRS21858STRPBF |
High voltage and programmable ramp slope control gate driver |
International Rectifier |
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