| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
| 2 |
0405-30 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
| 3 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 4 |
1502B |
GOLD BONDED DIODES |
BKC International Electronics |
| 5 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 6 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 7 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 8 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 9 |
15P1 |
Gold bounded germanium signal diode - general purpose |
SESCOSEM |
| 10 |
16P1 |
Gold bounded germanium signal diode - general purpose |
SESCOSEM |
| 11 |
19P1 |
Gold bounded germanium signal diode - switching |
SESCOSEM |
| 12 |
1N100 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 13 |
1N100 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 14 |
1N100 |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
| 15 |
1N100A |
100 V, 250 mA, gold bonded germanium diode |
BKC International Electronics |
| 16 |
1N100A |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 17 |
1N102 |
125 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 18 |
1N102 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 19 |
1N103 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 20 |
1N103 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 21 |
1N104 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 22 |
1N104 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 23 |
1N107 |
10 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 24 |
1N107 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 25 |
1N108 |
50 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 26 |
1N108 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 27 |
1N111 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 28 |
1N111 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
| 29 |
1N112 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 30 |
1N112 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
| | | |
