| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SK1117 |
V(dss): 600V; V(dgr): 600V; V(gss): +-20V; I(d): 6A; P(d): 100W; n-MOS II |
TOSHIBA |
| 2 |
2SK1257 |
V(dss): 60V; V(gss): +-20V; silicon N-channel power F-MOS FET. For DC-DC converter, no contact relay, solenoid drive, motor drive |
Panasonic |
| 3 |
2SK1259 |
V(dss): 60V; V(gss): +-20V; silicon N-channel power F-MOS FET. For DC-DC converter, no contact relay, solenoid drive, motor drive |
Panasonic |
| 4 |
2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use |
NEC |
| 5 |
FSS210 |
V(dss): 40V; V(gss): +-24V; I(d): 9A; I(dp): 52A; 2.0W; DC/DC converter applications |
SANYO |
| 6 |
S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): +-20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications |
TOSHIBA |
| 7 |
YTFP250 |
V(dsx): 200V; V(dgr): 200V; V(gss): 20V; 150W; silicon N-channel MOS type field effect effect transistor. For high speed, high current switching applications |
TOSHIBA |
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