No. |
Part Name |
Description |
Manufacturer |
1 |
HY51V17403HGT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
2 |
HY51V18163HGT-6 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
3 |
HY51V65163HGT-6 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
4 |
HY51VS17403HGT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
5 |
HY51VS18163HGT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
6 |
HY51VS65163HGT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
7 |
HY57V641620HGT-6 |
4 Banks x 1M x 16Bit Synchronous DRAM |
Hynix Semiconductor |
8 |
HY57V641620HGT-6I |
4 Banks x 1M x 16Bit Synchronous DRAM |
Hynix Semiconductor |
9 |
HY57V64820HGT-6 |
4 Banks x 2M x 8Bit Synchronous DRAM |
Hynix Semiconductor |
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