| No. |
Part Name |
Description |
Manufacturer |
| 1 |
GT30J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 2 |
GT30J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 3 |
GT30J122 |
Discrete IGBT |
TOSHIBA |
| 4 |
GT30J122A |
IGBT for soft switching applications |
TOSHIBA |
| 5 |
GT30J126 |
Discrete IGBT |
TOSHIBA |
| 6 |
GT30J301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 7 |
GT30J311 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 8 |
GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 9 |
GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 10 |
GT30J341 |
Discrete IGBT |
TOSHIBA |
| | | |
