| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 2 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 3 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 4 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 5 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 6 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 7 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 8 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 9 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 10 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 11 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 12 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 13 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 14 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 15 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 16 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 17 |
2SA1235A |
PNP TRANSISTOR |
DONG GUAN SHI HUA YUAN ELECTRON CO. |
| 18 |
2SC1008 |
TRANSISTOR NPN |
DONG GUAN SHI HUA YUAN ELECTRON CO. |
| 19 |
94SH |
Guaranteed Long Life, Used for Industrial Applications |
Vishay |
| 20 |
AD632SD_883B |
+-8 - +-18V; 4-6mW; internally trimmed precision IC multiplier. For high guality analog signal processing |
Analog Devices |
| 21 |
ADG836L |
0.5 Ω CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX w/Guaranteed Leakage Performance |
Analog Devices |
| 22 |
AEY30 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 23 |
AEY30A |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 24 |
AEY30B |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 25 |
AEY30C |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 26 |
AEY30D |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 27 |
AN1064 |
ST7 - WRITING OPTIMIZED HIWARE C LANGUAGE FOR ST7 |
SGS Thomson Microelectronics |
| 28 |
ASX20003 |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Standard PC board terminal. Single side stable. Coil rating 3 V DC. |
Matsushita Electric Works(Nais) |
| 29 |
ASX20006 |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Standard PC board terminal. Single side stable. Coil rating 6 V DC. |
Matsushita Electric Works(Nais) |
| 30 |
ASX20009 |
SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Standard PC board terminal. Single side stable. Coil rating 9 V DC. |
Matsushita Electric Works(Nais) |
| | | |
