No. |
Part Name |
Description |
Manufacturer |
1 |
2N3439 |
Silicon NPN High Voltage Transistor |
IPRS Baneasa |
2 |
2N3440 |
Silicon NPN High Voltage Transistor |
IPRS Baneasa |
3 |
2N5400 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
4 |
2N5401 |
High Voltage Transistor |
Korea Electronics (KEC) |
5 |
2N5401 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
6 |
2N5401C |
High Voltage Transistor |
Korea Electronics (KEC) |
7 |
2N5401S |
High Voltage Transistor |
Korea Electronics (KEC) |
8 |
2N5415 |
Silicon PNP High Voltage Transistor |
IPRS Baneasa |
9 |
2N5416 |
Silicon PNP High Voltage Transistor |
IPRS Baneasa |
10 |
2N5550 |
High Voltage Transistor |
Korea Electronics (KEC) |
11 |
2N5550 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
12 |
2N5550S |
High Voltage Transistor |
Korea Electronics (KEC) |
13 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
14 |
2N5551 |
High Voltage Transistor |
Korea Electronics (KEC) |
15 |
2N5551 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
16 |
2N5551C |
High Voltage Transistor |
Korea Electronics (KEC) |
17 |
2N5551S |
High Voltage Transistor |
Korea Electronics (KEC) |
18 |
2N5551SC |
High Voltage Transistor |
Korea Electronics (KEC) |
19 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
20 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
21 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
22 |
2N6515 |
NPN Epitaxial Silicon High Voltage Transistor |
Samsung Electronic |
23 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
24 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
25 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
26 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
27 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
28 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
29 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
30 |
2N6517 |
High Voltage Transistors |
ON Semiconductor |
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