| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4388 |
Silicon varactor diode for high-frequency harmonic generation applications |
Motorola |
| 2 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 3 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 4 |
1N5150A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 5 |
1N5151 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 6 |
1N5152 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 7 |
1N5152A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 8 |
1N5153 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 9 |
1N5153A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 10 |
1N5154 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
| 11 |
1N5155 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
| 12 |
1N5155A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 13 |
1N5156 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 14 |
1N5157 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 15 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 16 |
2N2369 |
HIGH-FREQUENCY SATURATED SWITCH |
SGS Thomson Microelectronics |
| 17 |
2N2369 |
HIGH-FREQUENCY SATURATED SWITCH |
ST Microelectronics |
| 18 |
2N2912 |
PNP high-speed, high-frequency power transistor |
Motorola |
| 19 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
| 20 |
2N3423 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 21 |
2N3424 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 22 |
2N3425 |
Dual NPN silicon transistor designed for use as a high-frequency sense amplifier |
Motorola |
| 23 |
2N3600 |
HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS |
SGS Thomson Microelectronics |
| 24 |
2N3600 |
Epitaxial planar NPN transistor designed High-Frequency oscillators and amplifiers |
SGS-ATES |
| 25 |
2N3600 |
HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS |
ST Microelectronics |
| 26 |
2N3818 |
NPN silicon transistor for high-frequency power applications to 150 MHz |
Motorola |
| 27 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 28 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 29 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 30 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| | | |
