| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FQH8N100C |
N-Channel QFET� MOSFET 1000V, 8.0A, 1.45? |
Fairchild Semiconductor |
| 2 |
IXFH8N80 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 3 |
MTH8N90 |
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS |
Motorola |
| 4 |
SSH8N55 |
N-Channel Power MOSFET |
Samsung Electronic |
| 5 |
SSH8N60 |
N-Channel Power MOSFET |
Samsung Electronic |
| 6 |
STH8N80 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 7 |
STH8N80FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 8 |
STH8NA60FI |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 9 |
STH8NA60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 10 |
STH8NA60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 11 |
STH8NA80FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 12 |
STH8NA80FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 13 |
STH8NA80FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 14 |
STH8NB90FI |
N-CHANNEL 900V - 1.1 OHM - 8A - TO-247/ISOWATT218 POWERMESH MOSFET |
SGS Thomson Microelectronics |
| 15 |
STH8NB90FI |
N-CHANNEL 900V - 1.1 OHM - 8A - TO-247/ISOWATT218 POWERMESH MOSFET |
ST Microelectronics |
| 16 |
STRH8N10 |
Rad-Hard N-Channel 100V - 6A MOSFET |
ST Microelectronics |
| 17 |
STRH8N10S1 |
Rad-Hard N-Channel 100V - 6A MOSFET |
ST Microelectronics |
| 18 |
STRH8N10SG |
Rad-Hard N-Channel 100V - 6A MOSFET |
ST Microelectronics |
| 19 |
UMH8N |
Transistors > Complex Digital Transistors |
ROHM |
| 20 |
UMH8NTR |
NPN+NPN Digital transistor(with built-in resistors) |
ROHM |
| | | |
