| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IXBH9N140G |
Discrete IGBTs |
IXYS |
| 2 |
IXBH9N140G |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
IXYS Corporation |
| 3 |
IXBH9N160G |
Discrete IGBTs |
IXYS |
| 4 |
IXBH9N160G |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
IXYS Corporation |
| 5 |
IXFH9N80 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 6 |
IXFH9N80Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 7 |
STH9NA60FI |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 8 |
STH9NA60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 9 |
STH9NA60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 10 |
STH9NA80 |
N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR |
ST Microelectronics |
| 11 |
STH9NA80FI |
N - CHANNEL 800V - 0.85Ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 12 |
STH9NA80FI |
OLD PRODUCT: NOT SUITABLE F PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 13 |
STH9NA80FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 14 |
UMH9N |
Pre-biased Transistors |
Micro Commercial Components |
| 15 |
UMH9N |
Transistors > Complex Digital Transistors |
ROHM |
| 16 |
UMH9NFHA |
NPN+NPN Digital transistor (Corresponds to AEC-Q101) |
ROHM |
| 17 |
UMH9NFHATN |
NPN+NPN Digital transistor (Corresponds to AEC-Q101) |
ROHM |
| 18 |
UMH9NTN |
NPN+NPN Digital transistor(with built-in resistors) |
ROHM |
| | | |
