No. |
Part Name |
Description |
Manufacturer |
1 |
ASMC-PHB9-TW005 |
ASMC-PHB9-TW005 · Envisium Power PLCC-4 Surface Mount LED |
Agilent (Hewlett-Packard) |
2 |
ASMC-PHB9-TW005 |
ASMC-PHB9-TW005 · Envisium Power PLCC-4 Surface Mount LED |
Agilent (Hewlett-Packard) |
3 |
MHB9110 |
MIS integrated circuit for telephone dialing |
Tesla Elektronicke |
4 |
MHB9200 |
MIS integrated circuit for telephone dialing |
Tesla Elektronicke |
5 |
MHB93448C |
Information for designers |
Tesla Elektronicke |
6 |
MHB93448C |
Programmable memory PROM 4096 bits |
Tesla Elektronicke |
7 |
MHB93448C |
Entering the contents of the PROM memory |
Tesla Elektronicke |
8 |
MHB93451C |
Programmable memory PROM 8192 bits |
Tesla Elektronicke |
9 |
MHB93451C |
Information for designers |
Tesla Elektronicke |
10 |
MHB93451C |
Entering the contents of the PROM memory |
Tesla Elektronicke |
11 |
MHB9500 |
MIS integrated circuit for telephone dialing |
Tesla Elektronicke |
12 |
MP04HB910 |
Dual Rectifier Diode Module Preliminary Information |
Dynex Semiconductor |
13 |
MP04HB910-24 |
Dual Rectifier Diode Module Preliminary Information |
Dynex Semiconductor |
14 |
MP04HB910-26 |
Dual Rectifier Diode Module Preliminary Information |
Dynex Semiconductor |
15 |
MP04HB910-28 |
Dual Rectifier Diode Module Preliminary Information |
Dynex Semiconductor |
16 |
MP04HB910-30 |
Dual Rectifier Diode Module Preliminary Information |
Dynex Semiconductor |
17 |
OHB900 |
HALLOGIC HALL EFFECT SENSOR ASSEMBLY |
etc |
18 |
OHB900 |
Hallogic hall effect sensor assembly |
Optek Technology |
19 |
PHB95N03LT |
TrenchMOS(tm) logic level FET |
Philips |
20 |
PHB95N03LTA |
TrenchMOS (TM) logic level FET |
Philips |
21 |
PHB95NQ04LT |
N-channel Trenchmos (tm) logic level FET |
Philips |
22 |
PHB95NQ04LT |
PHB95NQ04LT; N-channel Trenchmos (tm) logic level FET |
Philips |
23 |
PHB95NQ04LT |
PHB95NQ04LT; N-channel Trenchmos (tm) logic level FET |
Philips |
24 |
PHB96NQ03LT |
TrenchMOS(tm) logic level FET |
Philips |
25 |
PHB98N03LT |
TrenchMos(TM) logic level FET |
Philips |
26 |
PHB9N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
27 |
PHB9NQ20T |
N-channel TrenchMOS(TM) transistor |
Philips |
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