No. |
Part Name |
Description |
Manufacturer |
1 |
12FXF11 |
Silicon alloy-diffused junction avalanche rectifier 3000V 3.8kW 12A |
TOSHIBA |
2 |
12LF11 |
Silicon alloy-diffused junction avalanche rectifier 800V 12A 3.8kW |
TOSHIBA |
3 |
12NF11 |
Silicon alloy-diffused junction avalanche rectifier 1000V 12A 3.8kW |
TOSHIBA |
4 |
12QF11 |
Silicon alloy-diffused junction avalanche rectifier 1200V 12A 3.8kW |
TOSHIBA |
5 |
1LE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 800V |
TOSHIBA |
6 |
1N5059 |
Controlled avalanche rectifiers |
Philips |
7 |
1N5060 |
Controlled avalanche rectifiers |
Philips |
8 |
1N5061 |
Controlled avalanche rectifiers |
Philips |
9 |
1N5062 |
Controlled avalanche rectifiers |
Philips |
10 |
1NE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1000V |
TOSHIBA |
11 |
1QE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1200V |
TOSHIBA |
12 |
24LC09 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is an 8-Kbit Electrically Erasable PROM (EEPROM) that is designed with a custom device address to meet the requir |
Microchip |
13 |
25FXF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 3000V 8kW |
TOSHIBA |
14 |
25LF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 800V 12kW |
TOSHIBA |
15 |
25NF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1000V 12kW |
TOSHIBA |
16 |
25QF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1200V 12kW |
TOSHIBA |
17 |
28C64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com |
Microchip |
18 |
28LV64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle |
Microchip |
19 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
20 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
21 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
22 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
23 |
3LF11 |
Silicon alloy-diffused junction avalanche rectifier 3A 500V |
TOSHIBA |
24 |
3NF11 |
Silicon alloy-diffused junction avalanche rectifier 3A 1000V |
TOSHIBA |
25 |
3QF11 |
Silicon alloy-diffused junction avalanche rectifier 3A 1200V |
TOSHIBA |
26 |
50LF11 |
Silicon alloy-diffused junction avalanche rectifier 50A 800V |
TOSHIBA |
27 |
50NF11 |
Silicon alloy-diffused junction avalanche rectifier 50A 1000V |
TOSHIBA |
28 |
50QF11 |
Silicon alloy-diffused junction avalanche rectifier 50A 1200V |
TOSHIBA |
29 |
6FXF11 |
Silicon alloy-diffused junction avalanche rectifier 6A 3000V 2kW |
TOSHIBA |
30 |
6LF11 |
Silicon alloy-diffused junction avalanche rectifier 6A 800V 2kW |
TOSHIBA |
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