| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BA892-02V |
PIN Diodes - Bandswitching Diode for UHF-/VHF-Tuner |
Infineon |
| 2 |
BB555 |
Silicon Tuning Diode (For UHF-TV-tuners High capacitance ratio Low series inductance) |
Siemens |
| 3 |
BB565 |
Silicon Variable Capacitance Diode (For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance) |
Siemens |
| 4 |
BB659 |
Silicon Tuning Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance) |
Siemens |
| 5 |
BB659C |
Silicon Variable Capacitance Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance) |
Siemens |
| 6 |
CB1AHF-T-DM12V |
HIGH POWER AUTOMOTIVE RELAY CB-RELAYS |
Matsushita Electric Works(Nais) |
| 7 |
CB1AHF-T-DM24V |
HIGH POWER AUTOMOTIVE RELAY CB-RELAYS |
Matsushita Electric Works(Nais) |
| 8 |
CB1AHF-T-DP12V |
HIGH POWER AUTOMOTIVE RELAY CB-RELAYS |
Matsushita Electric Works(Nais) |
| 9 |
CB1AHF-T-DP24V |
HIGH POWER AUTOMOTIVE RELAY CB-RELAYS |
Matsushita Electric Works(Nais) |
| 10 |
CB1AHF-T-RM12V |
HIGH POWER AUTOMOTIVE RELAY CB-RELAYS |
Matsushita Electric Works(Nais) |
| 11 |
CB1AHF-T-RM24V |
HIGH POWER AUTOMOTIVE RELAY CB-RELAYS |
Matsushita Electric Works(Nais) |
| 12 |
CB1AHF-T-RP12V |
HIGH POWER AUTOMOTIVE RELAY CB-RELAYS |
Matsushita Electric Works(Nais) |
| 13 |
CB1AHF-T-RP24V |
HIGH POWER AUTOMOTIVE RELAY CB-RELAYS |
Matsushita Electric Works(Nais) |
| 14 |
EC3H02BA |
VHF-to-UHF Wide-Band Low Noise Amplifier |
ON Semiconductor |
| 15 |
EC4H09C |
UHF-to-X Band Low Noise Amplifier Transistor |
ON Semiconductor |
| 16 |
K4D64163HF-TC33 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
| 17 |
K4D64163HF-TC36 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
| 18 |
K4D64163HF-TC40 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
| 19 |
K4D64163HF-TC50 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
| 20 |
K4D64163HF-TC60 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
| 21 |
MAX2630 |
VHF-to-Microwave, +3V, General-Purpose Amplifiers |
MAXIM - Dallas Semiconductor |
| 22 |
MAX2630-MAX2633 |
VHF-to-Microwave / +3V / General-Purpose Amplifiers |
MAXIM - Dallas Semiconductor |
| 23 |
MAX2630EUS |
VHF-to-Microwave, +3V, General-Purpose Amplifiers |
MAXIM - Dallas Semiconductor |
| 24 |
MAX2630EUS+ |
VHF-to-Microwave, +3V, General-Purpose Amplifiers |
MAXIM - Dallas Semiconductor |
| 25 |
MAX2630EUS+T |
VHF-to-Microwave, +3V, General-Purpose Amplifiers |
MAXIM - Dallas Semiconductor |
| 26 |
MAX2630EUS-T |
VHF-to-Microwave / +3V / General-Purpose Amplifiers |
MAXIM - Dallas Semiconductor |
| 27 |
MAX2631 |
VHF-to-Microwave, +3V, General-Purpose Amplifiers |
MAXIM - Dallas Semiconductor |
| 28 |
MAX2631EUK |
VHF-to-Microwave, +3V, General-Purpose Amplifiers |
MAXIM - Dallas Semiconductor |
| 29 |
MAX2631EUK-T |
VHF-to-Microwave / +3V / General-Purpose Amplifiers |
MAXIM - Dallas Semiconductor |
| 30 |
MAX2632 |
VHF-to-Microwave, +3V, General-Purpose Amplifiers |
MAXIM - Dallas Semiconductor |
| | | |
