| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N459 |
Glass passivated silicon switching diode with high breaking voltage, marking using plain text or color rings yellow-green-white |
Texas Instruments |
| 2 |
1S920 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 3 |
1S921 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 4 |
1S922 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 5 |
1S923 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 6 |
2075 SERIES |
FIXED HIGH B.W. DELAY LINE TR |
Data Delay Devices Inc |
| 7 |
2075-1000 |
Delay 1000 +/-20 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
| 8 |
2075-2000 |
Delay 2000 +/-40 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
| 9 |
2075-300 |
Delay 300 +/-20 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
| 10 |
2075-3000 |
Delay 3000 +/-60 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
| 11 |
2075-4000 |
Delay 4000 +/-80 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
| 12 |
2075-500 |
Delay 500 +/-20 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
| 13 |
2075-5000 |
Delay 5000 +/-100 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
| 14 |
2075-6000 |
Delay 6000 +/-120 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
| 15 |
2075A SERIES |
FIXED HIGH B.W. DELAY LINE TR |
Data Delay Devices Inc |
| 16 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
| 17 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 18 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 19 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 20 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 21 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 22 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 23 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 24 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 25 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 26 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 27 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 28 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 29 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 30 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
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