| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ADM561 |
Ultralow Power, Active High Shutdown and an Active Low Receiver Enable |
Analog Devices |
| 2 |
ADM561JR-REEL |
Ultralow Power, Active High Shutdown and an Active Low Receiver Enable |
Analog Devices |
| 3 |
ADM561JRS-REEL |
Ultralow Power, Active High Shutdown and an Active Low Receiver Enable |
Analog Devices |
| 4 |
BAR81 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 5 |
BAR81W |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 6 |
LM4810 |
Dual 105mW Headphone Amplifier with Active-High Shutdown Mode |
National Semiconductor |
| 7 |
LM4810 |
LM4810 Dual 105mW Headphone Amplifier with Active-High Shutdown Mode |
Texas Instruments |
| 8 |
LM4810LD |
LM4810 Dual 105mW Headphone Amplifier with Active-High Shutdown Mode |
National Semiconductor |
| 9 |
LM4810LDX |
LM4810 Dual 105mW Headphone Amplifier with Active-High Shutdown Mode |
National Semiconductor |
| 10 |
LM4810MA |
LM4810 Dual 105mW Headphone Amplifier with Active-High Shutdown Mode |
National Semiconductor |
| 11 |
LM4810MAX |
LM4810 Dual 105mW Headphone Amplifier with Active-High Shutdown Mode |
National Semiconductor |
| 12 |
LM4810MM |
LM4810 Dual 105mW Headphone Amplifier with Active-High Shutdown Mode |
National Semiconductor |
| 13 |
LM4810MM/NOPB |
LM4810 Dual 105mW Headphone Amplifier with Active-High Shutdown Mode 8-VSSOP -40 to 85 |
Texas Instruments |
| 14 |
LM4810MMX |
LM4810 Dual 105mW Headphone Amplifier with Active-High Shutdown Mode |
National Semiconductor |
| 15 |
LM4810MMX/NOPB |
LM4810 Dual 105mW Headphone Amplifier with Active-High Shutdown Mode 8-VSSOP -40 to 85 |
Texas Instruments |
| 16 |
Q62702-A1145 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 17 |
Q62702-A1270 |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 18 |
TC1682EUA |
Inverting Charge Pump Voltage Doublers with Active High Shutdown |
Microchip |
| 19 |
TC1683EUA |
Inverting Charge Pump Voltage Doublers with Active High Shutdown |
Microchip |
| 20 |
TC1684EUA |
Inverting Charge Pump Voltage Doublers with Active High Shutdown |
Microchip |
| 21 |
TC168X |
Inverting Charge Pump Voltage Doublers with Active High Shutdown |
Microchip |
| 22 |
TPA721D |
Mono Class-AB Audio Amplifier with Active HIgh Shutdown |
Texas Instruments |
| 23 |
TPA721DG4 |
700-mW Mono, Class-AB Audio Amplifier with Active High Shutdown 8-SOIC |
Texas Instruments |
| 24 |
TPA721DGN |
Mono Class-AB Audio Amplifier with Active HIgh Shutdown |
Texas Instruments |
| 25 |
TPA721DGNG4 |
700-mW Mono, Class-AB Audio Amplifier with Active High Shutdown 8-MSOP-PowerPAD |
Texas Instruments |
| 26 |
TPA721DGNR |
Mono Class-AB Audio Amplifier with Active HIgh Shutdown |
Texas Instruments |
| 27 |
TPA721DR |
Mono Class-AB Audio Amplifier with Active HIgh Shutdown |
Texas Instruments |
| 28 |
TPA721EVM |
Mono Class-AB Audio Amplifier with Active HIgh Shutdown |
Texas Instruments |
| 29 |
TPA731D |
Mono, Differential Input, Class-AB Audio Amplifier with Active High Shutdown |
Texas Instruments |
| 30 |
TPA731DG4 |
700-mW Mono, Differential Input, Class-AB Audio Amplifier with Active High Shutdown 8-SOIC -40 to 85 |
Texas Instruments |
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