| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2003 |
HIGH-VOLTAGE/HIGH-CURRENTDARLINGTONARRAYS |
Allegro MicroSystems |
| 2 |
250UC11 |
Silicon alloy-diffused junction high-current rectifier 1600V 250A |
TOSHIBA |
| 3 |
2803 |
HIGH-VOLTAGE / HIGH-CURRENT DARLINGTON ARRAYS |
Allegro MicroSystems |
| 4 |
2878 |
QUAD HIGH-CURRENT DARLINGTON SWITCHES |
Allegro MicroSystems |
| 5 |
2943 |
HIGH-CURRENT HALF-BRIDGE MOTOR DRIVER |
Allegro MicroSystems |
| 6 |
2944 |
QUAD HIGH-CURRENT / HIGH-VOLTAGE SOURCE DRIVER |
Allegro MicroSystems |
| 7 |
2955-2 |
HIGH-CURRENT HALF-BRIDGE POWER DRIVER |
Allegro MicroSystems |
| 8 |
2961 |
HIGH-CURRENT HALF-BRIDGE PRINTHEAD/MOTOR DRIVER.WITH INTERNAL CURRENT SENSING AND CONTROL |
Allegro MicroSystems |
| 9 |
2N1038 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 10 |
2N1039 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 11 |
2N1040 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 12 |
2N1041 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 13 |
2N1204 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 14 |
2N1204A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 15 |
2N1494 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 16 |
2N1494A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 17 |
2N1495 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 18 |
2N1496 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 19 |
2N2096 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 20 |
2N2097 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 21 |
2N2099 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 22 |
2N2100 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 23 |
2N2195 |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
| 24 |
2N2195A |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
| 25 |
2N2195B |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
| 26 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 27 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 28 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 29 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
| 30 |
2N3252 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
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