| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CBT3857 |
10-bit bus switch with 10 kohm pull-down termination resistors |
Philips |
| 2 |
CBT3857PW |
10-bit bus switch with 10 kohm pull-down termination resistors |
Philips |
| 3 |
CXE-1089Z |
50 - 1200 MHz, 75 Ohm pHEMT MMIC Low Noise Amplifier |
Qorvo |
| 4 |
CXE-2022Z |
50 - 1000 MHz, 75 Ohm pHEMT MMIC Low Noise Amplifier |
Qorvo |
| 5 |
DM74LS248 |
BCD to 7-Segment Decoder with 2k Ohm Pull-Up Resistors |
National Semiconductor |
| 6 |
ECH8673 |
Power MOSFET (-)40V (-2.5)3.5A (163)85mOhm Pch&Nch 2in1 Type ECH8 |
ON Semiconductor |
| 7 |
EN8987 |
Power MOSFET -100V -11A 275m Ohm Pch Single TP/TP-FA |
ON Semiconductor |
| 8 |
ENA1907 |
PowerMOSFET -60V -78A 6.5mOhm Pch Single TO-220F-3SG |
ON Semiconductor |
| 9 |
HSTL16919 |
9-bit to 18-bit HSTL to LVTTL memory address latch with 12 kohm pull-up resistor |
Philips |
| 10 |
HSTL16919 |
9-bit to 18-bit HSTL to LVTTL memory address latch with 12 kohm pull-up resistor |
Philips |
| 11 |
HSTL16919DGG |
9-bit to 18-bit HSTL to LVTTL memory address latch with 12kOhm pull-up resistor |
Philips |
| 12 |
LM8471 |
Rhythm pattern generator for electronic organ |
SANYO |
| 13 |
M65575FP |
Rhythm Phrase Player |
Mitsubishi Electric Corporation |
| 14 |
MM5871 |
Rhythm pattern generator |
National Semiconductor |
| 15 |
PTH31002 |
30 Watts, 1.9�2.0 GHz 50-Ohm Power Hybrid |
Ericsson Microelectronics |
| 16 |
QPB7464 |
50 - 2600 MHz, 75 Ohm pHEMT Dual RF CATV Amplifier |
Qorvo |
| 17 |
RFCA3828 |
50 - 1200 MHz, 75 Ohm pHEMT High Linearity CATV Amplifier |
Qorvo |
| 18 |
RFL1P08 |
1A -80V AND -100V 3.65 OHM P-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 19 |
RFL1P10 |
1A -80V AND -100V 3.65 OHM P-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 20 |
ST2329I |
2-bit level translator for I2C/SPI with 10KOhm pull-up |
ST Microelectronics |
| 21 |
ST2329IQTR |
2-bit level translator for I2C/SPI with 10KOhm pull-up |
ST Microelectronics |
| 22 |
STE07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module |
ST Microelectronics |
| 23 |
STE50DE100 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT" 1000 V - 50 A - 0.026 Ohm POWER MODULE |
ST Microelectronics |
| 24 |
SXL-189-EB |
800-1000 MHz, 50 Ohm power MMIC amplifier. High linearity performance: +42dBm typ. at 900 MHz. Eval board. |
Stanford Microdevices |
| 25 |
SXL-208-BLK |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: +46dBm typ. at 900 MHz. Devices per reel 100/TRAY. |
Stanford Microdevices |
| 26 |
SXL-208-TR1 |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: +46dBm typ. at 900 MHz. Devices per reel 500. Reel size 7 |
Stanford Microdevices |
| 27 |
SXL-208-TR2 |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: +46dBm typ. at 900 MHz. Devices per reel 1000. Reel size 13 |
Stanford Microdevices |
| 28 |
SXL-316-BLK |
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: +52dBm typ. at 850 MHz. Devices per reel 100/TRAY. |
Stanford Microdevices |
| 29 |
SXL-316-TR2 |
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: +52dBm typ. at 850 MHz. Devices per reel 1000. Reel size 13 |
Stanford Microdevices |
| 30 |
TAT7457 |
DC - 1200 MHz, 75 Ohm pHEMT Adjustable Gain RF Amplifier |
Qorvo |
| | | |
