| No. |
Part Name |
Description |
Manufacturer |
| 1 |
DLW21HN670SQ2 |
On-Board Type (DC) EMI Suppression Filters |
muRata |
| 2 |
HN61256P |
32768 x 8-bit or 65536 x 4-bit CMOS Mask Programmable Read Only Memory |
Hitachi Semiconductor |
| 3 |
HN613128P |
16384-word x 8-bit Mask Programmable Read Only Memory |
Hitachi Semiconductor |
| 4 |
HN613256 |
32768 word x 8 Bit CMOS Programmable ROM |
Renesas |
| 5 |
HN62408 |
524288-WORD X 16-BIT/1048576-WORD X 8-BIT CMOS MASK PROGRAMMABLE ROM |
Hitachi Semiconductor |
| 6 |
HN62408FP |
524288-WORD X 16-BIT/1048576-WORD X 8-BIT CMOS MASK PROGRAMMABLE ROM |
Hitachi Semiconductor |
| 7 |
HN62408P |
524288-WORD X 16-BIT/1048576-WORD X 8-BIT CMOS MASK PROGRAMMABLE ROM |
Hitachi Semiconductor |
| 8 |
K4S64323LH-HN60 |
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
Samsung Electronic |
| 9 |
LPC2132FHN64 |
Single-chip 16/32-bit microcontrollers; 32/64/128/256/512 kB ISP/IAP flash with 10-bit ADC and DAC |
NXP Semiconductors |
| 10 |
LPC2138FHN64 |
Single-chip 16/32-bit microcontrollers; 32/64/128/256/512 kB ISP/IAP flash with 10-bit ADC and DAC |
NXP Semiconductors |
| 11 |
PHN603S |
TrenchMOS/Schottky diode array Three phase brushless d.c. motor driver |
Philips |
| 12 |
STD1HN60K3 |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 13 |
STQ1HN60K3-AP |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in TO-92 package |
ST Microelectronics |
| 14 |
STU1HN60K3 |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package |
ST Microelectronics |
| 15 |
THN6301S |
NPN Planer RF TRANSISTOR |
etc |
| 16 |
THN6301U |
NPN Planer RF TRANSISTOR |
etc |
| 17 |
ZXMHN6A07T8 |
60V N-CHANNEL MOSFET H-BRIDGE |
Diodes |
| 18 |
ZXMHN6A07T8 |
H-Bridge MOSFET |
Zetex Semiconductors |
| 19 |
ZXMHN6A07T8TA |
60V N-CHANNEL MOSFET H-BRIDGE |
Diodes |
| | | |
