| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AY101T |
Germanium surface rectifier low performance |
TUNGSRAM |
| 2 |
AY102T |
Germanium surface rectifier low performance |
TUNGSRAM |
| 3 |
B772 |
EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
Korea Electronics (KEC) |
| 4 |
B772 |
PNP (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
Samsung Electronic |
| 5 |
BF599 |
NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion) |
Siemens |
| 6 |
CA3043 |
High-Gain IF amplifier limiter, FM detector, and AF preamplifier/driver |
RCA Solid State |
| 7 |
D...-CRCW |
Metal Glaze on High Quality Ceramic, Protective Over Glaze, SnPb Contacts on Ni Barrier Layer, Excellent Stability at Different Environmental Conditions, Suitable for Commercial and Special Applications |
Vishay |
| 8 |
D..CRCW....LR |
Thick Film, Rectangular, Low Value Resistors, Special metal glaze on high quality ceramic, Protective overglaze, SnPb contacts on Ni barrier layer, Suitable for current sensors and shunts |
Vishay |
| 9 |
D..HR/CRCW . . . |
Rarefied Metal Glaze on High Quality Ceramic, Protective Over Glaze Passivation, SnPb Contacts on Ni Barrier Layer, Silver Palladium Contacts for Conductive Adhesive Attachment on Request, Suitable for Voltage Dividers and Hybrids |
Vishay |
| 10 |
D..P/CRCW |
Metal Glaze on High Quality Ceramic, Protective Over Glaze, SnPb Contacts on Ni Barrier Layer, Excellent Stability at Different Environmental Conditions |
Vishay |
| 11 |
D..TR/CRCW....- 29 |
User Trimmable, Metal Glaze on High Quality Ceramic, SnPb Contacts on Ni Barrier Layer |
Vishay |
| 12 |
IC/SS |
Power Line Carrier Local Area Network |
National Semiconductor |
| 13 |
IC_SS |
ICSS1001, ICSS1002, and ICSS1003 IC/SS Power Line Carrier Local Area Network Chip Set |
National Semiconductor |
| 14 |
KSB772 |
PNP (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
Samsung Electronic |
| 15 |
KSC2500 |
NPN (MEDIUM POWER AMPLIFIER LOW SATURATION) |
Samsung Electronic |
| 16 |
KSD560 |
NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE) |
Samsung Electronic |
| 17 |
KSD882 |
NPN (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
Samsung Electronic |
| 18 |
KSD986 |
NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE) |
Samsung Electronic |
| 19 |
M10, M11, M12, M25 |
Thin Film, Rectangular, Resistor Chips, Metal film layer on high quality ceramic, Protective top coat, SnPb contacts on Ni barrier layer, Excellent stability at different environmental conditions, Low TC and tight tolerances |
Vishay |
| 20 |
MGF1902B |
TAPE CARRIER LOW NOISE GaAs FET |
Mitsubishi Electric Corporation |
| 21 |
MGF1903B |
TAPE CARRIER LOW NOISE GaAs FET |
Mitsubishi Electric Corporation |
| 22 |
MGF1907A |
TAPE CARRIER LOW NOISE GaAs FET |
Mitsubishi Electric Corporation |
| 23 |
MGF1908A |
TAPE CARRIER LOW NOISE GaAs FET |
Mitsubishi Electric Corporation |
| 24 |
MJD42_MJD42C |
General Purpose Amplifier Low Speed Switching Applications |
Fairchild Semiconductor |
| 25 |
MX7225 |
CMOS, Quad, 8-Bit DAC with Voltage-Output Amplifier Latches |
MAXIM - Dallas Semiconductor |
| 26 |
MX7225C/D |
CMOS, Quad, 8-Bit DAC with Voltage-Output Amplifier Latches |
MAXIM - Dallas Semiconductor |
| 27 |
MX7225C/W+ |
CMOS, Quad, 8-Bit DAC with Voltage-Output Amplifier Latches |
MAXIM - Dallas Semiconductor |
| 28 |
MX7225KCWG+ |
CMOS, Quad, 8-Bit DAC with Voltage-Output Amplifier Latches |
MAXIM - Dallas Semiconductor |
| 29 |
MX7225KCWG+T |
CMOS, Quad, 8-Bit DAC with Voltage-Output Amplifier Latches |
MAXIM - Dallas Semiconductor |
| 30 |
MX7225KEWG+ |
CMOS, Quad, 8-Bit DAC with Voltage-Output Amplifier Latches |
MAXIM - Dallas Semiconductor |
| | | |
