No. |
Part Name |
Description |
Manufacturer |
1 |
1N459 |
Glass passivated silicon switching diode with high breaking voltage, marking using plain text or color rings yellow-green-white |
Texas Instruments |
2 |
1S920 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
3 |
1S921 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
4 |
1S922 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
5 |
1S923 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
6 |
2075 SERIES |
FIXED HIGH B.W. DELAY LINE TR |
Data Delay Devices Inc |
7 |
2075-1000 |
Delay 1000 +/-20 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
8 |
2075-2000 |
Delay 2000 +/-40 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
9 |
2075-300 |
Delay 300 +/-20 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
10 |
2075-3000 |
Delay 3000 +/-60 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
11 |
2075-4000 |
Delay 4000 +/-80 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
12 |
2075-500 |
Delay 500 +/-20 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
13 |
2075-5000 |
Delay 5000 +/-100 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
14 |
2075-6000 |
Delay 6000 +/-120 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
15 |
2075A SERIES |
FIXED HIGH B.W. DELAY LINE TR |
Data Delay Devices Inc |
16 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
17 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
18 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
19 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
20 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
21 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
22 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
23 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
24 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
25 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
26 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
27 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
28 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
29 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
30 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
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