No. |
Part Name |
Description |
Manufacturer |
1 |
2N1651 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
2 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
3 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
4 |
2N2285 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
5 |
2N2286 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
6 |
2N2287 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
7 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
8 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
9 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
10 |
AD5291 |
Single Channel, 256-Position, 1% R-Tol, Digital Potentiometer with 20-Times Programmable Memory |
Analog Devices |
11 |
AD5292 |
Single Channel, 1024-Position, 1% R-Tol, Digital Potentiometer with 20-Times Programmable Memory |
Analog Devices |
12 |
ADG1208 |
Low Capacitance, 8-Channel, ±15 V/+12 V imes new roman">iCMOS® Multiplexer |
Analog Devices |
13 |
ADG1411 |
1.8 Ω Max On Resistance, ±15 V/12 V/±5 V, imes new roman">iCMOS®, Quad SPST Switch |
Analog Devices |
14 |
ADG1412 |
1.8 Ω Max On Resistance, ±15 V/12 V/±5 V, imes new roman">iCMOS®, Quad SPST Switch |
Analog Devices |
15 |
ADG1413 |
1.8 Ω Max On Resistance, ±15 V/12 V/±5 V, imes new roman">iCMOS®, Quad SPST Switch |
Analog Devices |
16 |
ADG1436 |
1.5 Ω On Resistance, ±15 V/12 V/±5 V, imes new roman">iCMOS®, Dual SPDT Switch |
Analog Devices |
17 |
AN1159 |
TIPS TO REDUCE PROGRAM AND ERASE TIMES |
SGS Thomson Microelectronics |
18 |
AN3917S |
Crystal Oscillator IC with Built-in Multiplier (2 Times) |
Panasonic |
19 |
AN8847 |
Head amplifier IC for CD-ROM drive for 32 times speed or more |
Panasonic |
20 |
AN8847SB |
Head amplifier IC for CD-ROM drive for 32 times speed or more |
Panasonic |
21 |
AN8849SA |
Head amplifier IC for CD-ROM drive (for 24 times speed or more) |
Panasonic |
22 |
AN8882 |
Head amplifier IC for CD-ROM drive for 32 times speed or more |
Panasonic |
23 |
BAS116 |
Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode) |
Siemens |
24 |
BAV170 |
Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) |
Siemens |
25 |
BAV199 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Connected in series) |
Siemens |
26 |
BAW156 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode) |
Siemens |
27 |
BSW72 |
PNP silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
28 |
BSW73 |
PNP silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
29 |
BSW74 |
PNP silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
30 |
BSW75 |
PNP silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
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