| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5809US |
Diode Switching 100V 6A 2-Pin SMD |
New Jersey Semiconductor |
| 2 |
1N5811US |
Diode Switching 150V 6A 2-Pin SMD |
New Jersey Semiconductor |
| 3 |
1N6102US |
Diode TVS Single Bi-Dir 5.2V 500W 2-Pin SMD |
New Jersey Semiconductor |
| 4 |
1N6103US |
Diode TVS Single Bi-Dir 5.7V 500W 2-Pin SMD |
New Jersey Semiconductor |
| 5 |
1N6104AUS |
Diode TVS Single Bi-Dir 6.2V 500W 2-Pin SMD |
New Jersey Semiconductor |
| 6 |
1N6105AUS |
Diode TVS Single Bi-Dir 6.9V 500W 2-Pin SMD |
New Jersey Semiconductor |
| 7 |
1N6113ASBM |
Diode TVS Single Bi-Dir 15.2V 500W 2-Pin SMD |
New Jersey Semiconductor |
| 8 |
1N6119C |
Diode TVS Single Bi-Dir 27.4V 500W 2-Pin SMD |
New Jersey Semiconductor |
| 9 |
1N6119CA |
Diode TVS Single Bi-Dir 27.4V 500W 2-Pin SMD |
New Jersey Semiconductor |
| 10 |
1N6124US |
Diode TVS Single Bi-Dir 42.6V 500W 2-Pin SMD |
New Jersey Semiconductor |
| 11 |
1N6129US |
Diode TVS Single Bi-Dir 69.2V 500W 2-Pin SMD |
New Jersey Semiconductor |
| 12 |
1N6130AUS |
Diode TVS Single Bi-Dir 76V 500W 2-Pin SMD |
New Jersey Semiconductor |
| 13 |
1N6155AUS |
Diode TVS Single Bi-Dir 27.4V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 14 |
1N6159US |
Diode TVS Single Bi-Dir 38.8V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 15 |
1N6160AUS |
Diode TVS Single Bi-Dir 42.6V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 16 |
1N6161US |
Diode TVS Single Bi-Dir 47.1V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 17 |
1N6170US |
Diode TVS Single Bi-Dir 114V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 18 |
1N6173US |
Diode TVS Single Bi-Dir 152V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 19 |
1PS76SB21 |
Schottky barrier diodes in small packages |
Nexperia |
| 20 |
1PS76SB21 |
Schottky barrier diodes in small packages |
NXP Semiconductors |
| 21 |
2SC5179 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 22 |
2SC5179-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 23 |
2SC5179-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 24 |
3SK299 |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD |
NEC |
| 25 |
3SK299-T1 |
4-pin small type dual gate MESFET NF=1 |
NEC |
| 26 |
3SK299-T2 |
4-pin small type dual gate MESFET NF=1 |
NEC |
| 27 |
40ST1041A |
40 PIN SMD ETHERNET 10/100 BASE QUAD PORT TRANSFORMER |
Unknow |
| 28 |
AN577 |
PACKAGING AND SOLDERING METHOD DEVICES IN SMA, SMB AND SMC PACKAGE |
SGS Thomson Microelectronics |
| 29 |
AN916 |
TSM101 IN SMPS |
SGS Thomson Microelectronics |
| 30 |
APH1608EC |
SUPER THIN SMD CHIP LED 1608 |
Kingbright Electronic |
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