| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N2415 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 2 |
2N2416 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 3 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 4 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 5 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 6 |
2SA1612 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR |
NEC |
| 7 |
2SA811A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 8 |
2SB1316TL |
PNP High gain amplifier Transistor(Darlington) |
ROHM |
| 9 |
2SB852KT146B |
PNP High gain amplifier Transistor(Darlington) |
ROHM |
| 10 |
2SC1622 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 11 |
2SC1622A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 12 |
2SC1622A-L |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 13 |
2SC1622A-T1B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 14 |
2SC1622A-T2B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 15 |
2SC2298 |
HIGH GAIN AMPLIFIER |
Hitachi Semiconductor |
| 16 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 17 |
2SC4180 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 18 |
2SC5369-T1 |
Microwave noise reduced amplifier/high gain amplifier |
NEC |
| 19 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 20 |
2SC5408-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 21 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 22 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 23 |
2SC5507 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 24 |
2SC5507-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 25 |
2SC5508 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 26 |
2SC5508-T2 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 27 |
2SC5606 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 28 |
2SC5606-T1 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 29 |
2SD1383KT146B |
NPN High gain amplifier Transistor (Darlington) |
ROHM |
| 30 |
2SD1834T100 |
NPN High gain amplifier Transistor (Darlington) |
ROHM |
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