| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5605 |
Diode 5KV 2A 2-Pin DE |
New Jersey Semiconductor |
| 2 |
1N5605-1 |
Diode 5KV 2A 2-Pin DE |
New Jersey Semiconductor |
| 3 |
1N5606 |
Diode 5KV 2A 2-Pin DE |
New Jersey Semiconductor |
| 4 |
1N5607 |
Diode 5KV 2A 2-Pin DE |
New Jersey Semiconductor |
| 5 |
1N5608 |
Diode 5KV 2A 2-Pin DE |
New Jersey Semiconductor |
| 6 |
1N5609 |
Diode 5KV 2A 2-Pin DE |
New Jersey Semiconductor |
| 7 |
73M1822-KEYCHN |
73M1822 Keychain Demo Board |
MAXIM - Dallas Semiconductor |
| 8 |
73M1866B-KEYCHN |
73M1866B Keychain Demo Board |
MAXIM - Dallas Semiconductor |
| 9 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
| 10 |
BFP136 |
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) |
Siemens |
| 11 |
BFP136W |
RF-Bipolar - For power amplifier in DECT and PCN systems |
Infineon |
| 12 |
BFP136W |
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) |
Siemens |
| 13 |
CS5510/11/12/13 |
16 and 20-Bit, 8-Pin Delta Sigma ADC |
Cirrus Logic |
| 14 |
M52979F |
2-CHANNEL SPD SENSOR BUILT-IN DETECT AMOUNT OF LIGHT |
Mitsubishi Electric Corporation |
| 15 |
Q62702-F1575 |
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) |
Siemens |
| 16 |
R3130N16EA |
Low Voltage Detector with built-in Delay Circuit |
Ricoh |
| 17 |
R3130N16EA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 1.6V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. |
Ricoh |
| 18 |
R3130N16EC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 1.6V. Standard output delay time 240ms. Output type CMOS. Taping type TR. |
Ricoh |
| 19 |
R3130N17EA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 1.7V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. |
Ricoh |
| 20 |
R3130N17EC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 1.7V. Standard output delay time 240ms. Output type CMOS. Taping type TR. |
Ricoh |
| 21 |
R3130N18EA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 1.8V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. |
Ricoh |
| 22 |
R3130N18EC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 1.8V. Standard output delay time 240ms. Output type CMOS. Taping type TR. |
Ricoh |
| 23 |
R3130N19EA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 1.9V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. |
Ricoh |
| 24 |
R3130N19EC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 1.9V. Standard output delay time 240ms. Output type CMOS. Taping type TR. |
Ricoh |
| 25 |
R3130N20EA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.0V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. |
Ricoh |
| 26 |
R3130N20EC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.0V. Standard output delay time 240ms. Output type CMOS. Taping type TR. |
Ricoh |
| 27 |
R3130N21EA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.1V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. |
Ricoh |
| 28 |
R3130N21EC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.1V. Standard output delay time 240ms. Output type CMOS. Taping type TR. |
Ricoh |
| 29 |
R3130N22EA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.2V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. |
Ricoh |
| 30 |
R3130N22EC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.2V. Standard output delay time 240ms. Output type CMOS. Taping type TR. |
Ricoh |
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