| No. |
Part Name |
Description |
Manufacturer |
| 1 |
100322QMQB |
Low power 9- bit buffer. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 2 |
100328QMQB |
Low power octal ECL/TTL bidirectional translator with latch. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 3 |
100329DMQB |
Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 4 |
100329FMQB |
Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 5 |
100329QMQB |
Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 6 |
100331DMQB |
Low power triple D flip-flop. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 7 |
100331FMQB |
Low power triple D flip-flop. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 8 |
100331QMQB |
Low power triple D flip-flop. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 9 |
100364DMQB |
Low power 16-input multiplexer. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 10 |
100364FMQB |
Low power 16-input multiplexer. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 11 |
100364QMQB |
Low power 16-input multiplexer. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 12 |
100371QMQB |
Low power triple 4-input multiplexer with enable. Military grade device with environmental and burn-in processing. |
National Semiconductor |
| 13 |
10DZ100P |
10W 100V Zener diode in plastic case |
IPRS Baneasa |
| 14 |
10DZ120P |
10W 120V Zener diode in plastic case |
IPRS Baneasa |
| 15 |
10DZ12P |
10W 12V Zener diode in plastic case |
IPRS Baneasa |
| 16 |
10DZ150P |
10W 150V Zener diode in plastic case |
IPRS Baneasa |
| 17 |
10DZ15P |
10W 15V Zener diode in plastic case |
IPRS Baneasa |
| 18 |
10DZ180P |
10W 180V Zener diode in plastic case |
IPRS Baneasa |
| 19 |
10DZ18P |
10W 18V Zener diode in plastic case |
IPRS Baneasa |
| 20 |
10DZ22P |
10W 22V Zener diode in plastic case |
IPRS Baneasa |
| 21 |
10DZ27P |
10W 27V Zener diode in plastic case |
IPRS Baneasa |
| 22 |
10DZ33P |
10W 33V Zener diode in plastic case |
IPRS Baneasa |
| 23 |
10DZ39P |
10W 39V Zener diode in plastic case |
IPRS Baneasa |
| 24 |
10DZ47P |
10W 47V Zener diode in plastic case |
IPRS Baneasa |
| 25 |
10DZ56P |
10W 56V Zener diode in plastic case |
IPRS Baneasa |
| 26 |
10DZ68P |
10W 68V Zener diode in plastic case |
IPRS Baneasa |
| 27 |
10DZ82P |
10W 82V Zener diode in plastic case |
IPRS Baneasa |
| 28 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
| 29 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
| 30 |
2N3810DCSM |
DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
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