| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1MBH03D-120 |
Ratings and characterisitcs Fuji IGBT |
Fuji Electric |
| 2 |
1MBH05D-060 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
| 3 |
1MBH05D-120 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
| 4 |
1MBH08D-120 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
| 5 |
1MBH10D-060 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
| 6 |
1MBH10D-120 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
| 7 |
1MBH15D-060 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
| 8 |
1MBH50D-060S |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
| 9 |
1MBH75D-060 |
Ratings and characteristics of Fuji IGBT�� |
Fuji Electric |
| 10 |
1MBH75D-060S |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
| 11 |
1MBI400NB-060 |
Ratings and characteristics of Fuji IGBT Module |
Fuji Electric |
| 12 |
1N251 |
Glass passivated silicon switching diode (marking with color rings red, green, brown) |
Texas Instruments |
| 13 |
1N3063 |
Extremely fast glass passivated silicon switching diode, marking plain text or color rings yellow-orange-black-green |
Texas Instruments |
| 14 |
1N4305 |
Extremely fast glass passivated silicon switching diode, marking plain text or color rings yellow-orange-black-green |
Texas Instruments |
| 15 |
1N459 |
Glass passivated silicon switching diode with high breaking voltage, marking using plain text or color rings yellow-green-white |
Texas Instruments |
| 16 |
293D |
Solid Tantalum Chip Capacitors, Molded, Standard EIA Case Sizings and Ratings, TANTAMOUNT®, Commercial, Surface Mount, Automatic Pick & Place Compatible, Optical Character Recognition Qualified |
Vishay |
| 17 |
293D |
Solid Tantalum Chip Capacitors, Molded, Standard EIA Case Sizings and Ratings, TANTAMOUNT®, Commercial, Surface Mount, Automatic Pick & Place Compatible, Optical Character Recognition Qualified |
Vishay |
| 18 |
2N1893 |
Silicon NPN planar transistor for high speed switchings |
AEG-TELEFUNKEN |
| 19 |
2N2193 |
Silicon NPN planar epitaxial transistor for high speed switchings and RF amplifiers |
AEG-TELEFUNKEN |
| 20 |
2N2218 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 21 |
2N2218A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 22 |
2N2219 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 23 |
2N2219A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 24 |
2N2221 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 25 |
2N2221A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 26 |
2N2222 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 27 |
2N2222A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 28 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 29 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 30 |
4-LEAD PLASTIC |
Outline drawings |
SGS-ATES |
| | | |
