| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ACV11112 |
CV-relay. Automotive low profile micro-ISO relay. With diode inside type. 1 form C. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 2 |
ACV11212 |
CV-relay. Automotive low profile micro-ISO relay. With resistor inside type. 1 form C. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 3 |
ACV12112 |
CV-relay. Automotive low profile micro 280 relay. With diode inside type type. 1 form C. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 4 |
ACV12212 |
CV-relay. Automotive low profile micro 280 relay. With resistor inside type type. 1 form C. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 5 |
ACV13112 |
CV-relay. Automotive low profile micro 280 relay. With diode inside type. 1 form C. PC board terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 6 |
ACV13212 |
CV-relay. Automotive low profile micro 280 relay. With resistor inside type. 1 form C. PC board terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 7 |
ACV31112 |
CV-relay. Automotive low profile micro-ISO relay. With diode inside type. 1 form A. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 8 |
ACV31212 |
CV-relay. Automotive low profile micro-ISO relay. With resistor inside type. 1 form A. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 9 |
ACV32112 |
CV-relay. Automotive low profile micro 280 relay. With diode inside type. 1 form A. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 10 |
ACV32212 |
CV-relay. Automotive low profile micro 280 relay. With resistor inside type. 1 form A. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 11 |
ACV33112 |
CV-relay. Automotive low profile micro 280 relay. With diode inside type. 1 form A. PC board terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 12 |
ACV33212 |
CV-relay. Automotive low profile micro 280 relay. With resistor inside type. 1 form A. PC board terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 13 |
MCR22-6-D |
Seinsitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
ON Semiconductor |
| 14 |
MCR703A-D |
Seinsitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristos |
ON Semiconductor |
| 15 |
MCR716-D |
Seinsitive Gate Silicon Controlled Rectifers Reverse Blocking Thyristors |
ON Semiconductor |
| 16 |
MCR8DSM-D |
Seinsitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors |
ON Semiconductor |
| 17 |
OMS305 |
50V three terminal bridge with current and temperature sinsing |
Omnirel |
| 18 |
OMS305A |
50V three terminal bridge with current and temperature sinsing |
Omnirel |
| 19 |
OMS405A |
50V three terminal bridge with current and temperature sinsing |
Omnirel |
| 20 |
OMS410 |
100V three terminal bridge with current and temperature sinsing |
Omnirel |
| 21 |
OMS410A |
100V three terminal bridge with current and temperature sinsing |
Omnirel |
| 22 |
OMS420 |
200V three terminal bridge with current and temperature sinsing |
Omnirel |
| 23 |
OMS420A |
200V three terminal bridge with current and temperature sinsing |
Omnirel |
| 24 |
OMS425 |
250V three terminal bridge with current and temperature sinsing |
Omnirel |
| 25 |
OMS510 |
100V three terminal bridge with current and temperature sinsing |
Omnirel |
| 26 |
OMS520 |
200V three terminal bridge with current and temperature sinsing |
Omnirel |
| 27 |
OMS525 |
250V three terminal bridge with current and temperature sinsing |
Omnirel |
| 28 |
OMS625 |
250V three terminal bridge with current and temperature sinsing |
Omnirel |
| 29 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
| 30 |
TC1427 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
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