| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1MB12-140 |
INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
| 2 |
1MBH60-100 |
INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
| 3 |
1MBH60D-090A |
IGBT INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
| 4 |
2322 640 90059 |
NTC Thermistors, Long Insulated Leads |
Vishay |
| 5 |
2322 645 90028 |
NTC Thermistors, Long Non-Insulated Leads |
Vishay |
| 6 |
232264090059 |
NTC Thermistors, Long Insulated Leads |
Vishay |
| 7 |
232264590028 |
NTC Thermistors, Long Non-Insulated Leads |
Vishay |
| 8 |
2PG301 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 9 |
2PG302 |
For Insulated Gate Bipolar Transistor |
Panasonic |
| 10 |
2PG303 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 11 |
2PG304 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 12 |
2PG351 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 13 |
2PG352 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 14 |
2PG353 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 15 |
2PG401 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 16 |
2PG402 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 17 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 18 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 19 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 20 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 21 |
AC10DSMA |
10A resin insulated TRIAC |
NEC |
| 22 |
AC10FSMA |
10A resin insulated TRIAC |
NEC |
| 23 |
ACCESSORIES |
Mica discs, insulated bushings clamping plate, cooling clamps, mounting kit for transistors 56218, spacer washers 56245 56246 |
VALVO |
| 24 |
AN856 |
TRIPLE GALVANIC INSULATED HIGH SIDE DRIVING WITH TD310 |
SGS Thomson Microelectronics |
| 25 |
BAS28 |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
Siemens |
| 26 |
BAS28W |
Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes) |
Siemens |
| 27 |
BAW100 |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
Siemens |
| 28 |
BAW101 |
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) |
Siemens |
| 29 |
BCR08AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 30 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| | | |
