| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4148 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N914 |
IPRS Baneasa |
| 2 |
1N4149 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N916 |
IPRS Baneasa |
| 3 |
1N4151 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N3604 |
IPRS Baneasa |
| 4 |
1N4154 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N4009 |
IPRS Baneasa |
| 5 |
1N4446 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N914A |
IPRS Baneasa |
| 6 |
1N4447 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N916A |
IPRS Baneasa |
| 7 |
1N4448 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N914B |
IPRS Baneasa |
| 8 |
1N4449 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N916B |
IPRS Baneasa |
| 9 |
1N4454 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N3064 |
IPRS Baneasa |
| 10 |
1SV118 |
AM tuner silicon epitaxial varactor diode ESVAC® |
NEC |
| 11 |
1SV225 |
Variable Capacitance Diode Electronic Tuning Applications of FM Receivers |
TOSHIBA |
| 12 |
1SV228 |
Variable Capacitance Diode Electronic Tuning Applications of FM Receivers |
TOSHIBA |
| 13 |
1SV50-1 |
FM/VHF tuner, AFC silicon epitaxial varactor diode ESVAC® |
NEC |
| 14 |
C9052 |
Si photodiode evaluation circuit |
Hamamatsu Corporation |
| 15 |
C9052-01 |
Si photodiode evaluation circuit |
Hamamatsu Corporation |
| 16 |
C9052-02 |
Si photodiode evaluation circuit |
Hamamatsu Corporation |
| 17 |
C9052-03 |
Si photodiode evaluation circuit |
Hamamatsu Corporation |
| 18 |
C9052-04 |
Si photodiode evaluation circuit |
Hamamatsu Corporation |
| 19 |
DTV1500HD |
High voltage diode especially designed for horizontal deflection, 1500V, 6A, 125 ns |
SGS Thomson Microelectronics |
| 20 |
DTV1500HF |
High voltage diode especially designed for horizontal deflection, 1500V, 6A, 125 ns |
SGS Thomson Microelectronics |
| 21 |
DTV1500HFP |
High voltage diode especially designed for horizontal deflection, 1500V, 6A, 125 ns |
SGS Thomson Microelectronics |
| 22 |
FDLL3595 |
High Conductance,��Low Leakage Diode Expansion Gap |
Fairchild Semiconductor |
| 23 |
ISL99140 |
40A DrMOS Power Module with Integrated Diode Emulation and Thermal Warning Output |
Intersil |
| 24 |
RL1201LGO-711 |
Linear CMOS spectroscopy sensor. 25 microm pitch, 2.5 mm aperture, 128 photodiode elements. |
PerkinElmer Optoelectronics |
| 25 |
RL1202LGO-711 |
Linear CMOS spectroscopy sensor. 25 microm pitch, 2.5 mm aperture, 256 photodiode elements. |
PerkinElmer Optoelectronics |
| 26 |
RL1205LGO-711 |
Linear CMOS spectroscopy sensor. 25 microm pitch, 2.5 mm aperture, 512 photodiode elements. |
PerkinElmer Optoelectronics |
| 27 |
RL1210LGO-711 |
Linear CMOS spectroscopy sensor. 25 microm pitch, 2.5 mm aperture, 1024 photodiode elements. |
PerkinElmer Optoelectronics |
| 28 |
RL1501LGO-711 |
Linear CMOS spectroscopy sensor. 50 microm pitch, 2.5 mm aperture, 128 photodiode elements. |
PerkinElmer Optoelectronics |
| 29 |
RL1502LGO-711 |
Linear CMOS spectroscopy sensor. 50 microm pitch, 2.5 mm aperture, 256 photodiode elements. |
PerkinElmer Optoelectronics |
| 30 |
RL1505LGO-711 |
Linear CMOS spectroscopy sensor. 50 microm pitch, 2.5 mm aperture, 512 photodiode elements. |
PerkinElmer Optoelectronics |
| | | |
