DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for ION I

Datasheets found :: 9968
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1416-1 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
2 1416-3 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
3 1421 Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
4 1422 Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
5 22C040 32 to 40 SEC INSTANT VOICE ROM Integrated Silicon Solution Inc
6 24C016 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM Integrated Silicon Solution Inc
7 2502-2 MOUNTING BRACKET KIT INSTALLATION INSTRUCTIONS etc
8 277 Precision Isolation Amplifier High CMV/CMR,+-5V Floating Intronics
9 277A Precision Isolation Amplifier High CMV/CMR,+-5V Floating Intronics
10 277J Precision Isolation Amplifier High CMV/CMR,+-5V Floating Intronics
11 277K Precision Isolation Amplifier High CMV/CMR,+-5V Floating Intronics
12 2N2322 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
13 2N2323 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
14 2N2324 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
15 2N2325 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
16 2N2326 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
17 2N4212 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
18 2N4213 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
19 2N4214 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
20 2N4215 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
21 2N4216 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
22 2N5431 Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits Motorola
23 311M09 COMMISSION INTERNATIONALE DE KARTING - FIA etc
24 363D LM363 Precision Instrumentation Amplifier National Semiconductor
25 40080 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
26 40081 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
27 40082 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
28 40446 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
29 40581 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
30 40582 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State


Datasheets found :: 9968
Page: | 1 | 2 | 3 | 4 | 5 |



© 2024 - www Datasheet Catalog com