| No. |
Part Name |
Description |
Manufacturer |
| 1 |
M56710FP |
F2F MAGNETIC STRIPE ENCORDING CARD READER |
Mitsubishi Electric Corporation |
| 2 |
M56710FP |
ASSP>ICs for Card Reader>Magnetic Stripe encoder |
Renesas |
| 3 |
TUSB1310A |
SuperSpeed 5 Gbps USB 3.0 Transceiver with PIPE and ULPI Interfaces 175-NFBGA -40 to 85 |
Texas Instruments |
| 4 |
TUSB1310AZAY |
SuperSpeed 5 Gbps USB 3.0 Transceiver with PIPE and ULPI Interfaces 175-NFBGA -40 to 85 |
Texas Instruments |
| 5 |
TUSB1310AZAYR |
SuperSpeed 5 Gbps USB 3.0 Transceiver with PIPE and ULPI Interfaces 175-NFBGA -40 to 85 |
Texas Instruments |
| 6 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 7 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 8 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 10 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 11 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 12 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| | | |
