| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 2 |
0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
| 3 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 4 |
1307028 |
Dipole Antenna for ISM Band |
Tyco Electronics |
| 5 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 6 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 7 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 8 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 9 |
1MB12-140 |
INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
| 10 |
1MBH60-100 |
INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
| 11 |
1MBH60D-090A |
IGBT INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
| 12 |
2001 |
1 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
| 13 |
2001-2 |
1 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
| 14 |
2003 |
Microwave CW Bipolar / 3 Watts - 28 Colts / 2000 Mhz |
Acrian |
| 15 |
2003-2 |
3 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
| 16 |
2005 |
5 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
| 17 |
2010 |
10 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
| 18 |
2010-2 |
10 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
| 19 |
2010-3 |
10 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
| 20 |
2015M |
MICROWAVE BIPOLAR |
Acrian |
| 21 |
2015M-2 |
15 W, 28 V, 2000 MHz, microwave CW bipolar |
Acrian |
| 22 |
2023-1.5 |
1.5 W, 22 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 23 |
2023-1.5-2 |
1.5 W, 22 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 24 |
2023-12 |
12 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 25 |
2023-12-2 |
12 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 26 |
2023-16 |
16 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 27 |
2023-16-2 |
16 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 28 |
2023-3 |
3 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 29 |
2023-3-2 |
3 W, 24 V, 2-2.3 GHz, microwave-bipolar |
Acrian |
| 30 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
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