Datasheets for IRF12

Datasheets found :: 21 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	IRF120	N-Channel Power MOSFETs/ 11 A/ 60-100 V	Fairchild Semiconductor
2	IRF120	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A.	General Electric Solid State
3	IRF120	8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs	Intersil
4	IRF120	Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-204AA	New Jersey Semiconductor
5	IRF120	N-CHANNEL POWER MOSFETS	Samsung Electronic
6	IRF120-123	N-Channel Power MOSFETs/ 11 A/ 60-100 V	Fairchild Semiconductor
7	IRF121	N-Channel Power MOSFETs/ 11 A/ 60-100 V	Fairchild Semiconductor
8	IRF121	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A.	General Electric Solid State
9	IRF121	8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs	Intersil
10	IRF121	Trans MOSFET N-CH 80V 9.2A 3-Pin(2+Tab) TO-3	New Jersey Semiconductor
11	IRF121	N-CHANNEL POWER MOSFETS	Samsung Electronic
12	IRF122	N-Channel Power MOSFETs/ 11 A/ 60-100 V	Fairchild Semiconductor
13	IRF122	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A.	General Electric Solid State
14	IRF122	8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs	Intersil
15	IRF122	Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-3	New Jersey Semiconductor
16	IRF122	N-CHANNEL POWER MOSFETS	Samsung Electronic
17	IRF123	N-Channel Power MOSFETs/ 11 A/ 60-100 V	Fairchild Semiconductor
18	IRF123	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A.	General Electric Solid State
19	IRF123	8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs	Intersil
20	IRF123	Trans MOSFET N-CH 80V 8A 3-Pin(2+Tab) TO-3	New Jersey Semiconductor
21	IRF123	N-CHANNEL POWER MOSFETS	Samsung Electronic

Datasheets found :: 21 Page: | 1 |