| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF150 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
| 2 |
IRF150 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
| 3 |
IRF150 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 4 |
IRF150 |
40A/ 100V/ 0.055 Ohm/ N-Channel Power MOSFET |
Intersil |
| 5 |
IRF150 |
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 6 |
IRF150 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 7 |
IRF150 |
N-CHANNEL POWER MOSFET |
SemeLAB |
| 8 |
IRF150-153 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
| 9 |
IRF1503 |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 10 |
IRF1503L |
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 11 |
IRF1503LPBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 12 |
IRF1503PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13 |
IRF1503S |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 14 |
IRF1503STRLPBF |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 15 |
IRF150CF |
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 16 |
IRF150SMD |
N-CHANNEL POWER MOSFET |
SemeLAB |
| 17 |
IRF151 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
| 18 |
IRF151 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
| 19 |
IRF151 |
33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs |
Intersil |
| 20 |
IRF151 |
Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 21 |
IRF151 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 22 |
IRF152 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
| 23 |
IRF152 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
| 24 |
IRF152 |
33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs |
Intersil |
| 25 |
IRF152 |
Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 26 |
IRF152 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 27 |
IRF152R |
Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 28 |
IRF153 |
N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
| 29 |
IRF153 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
| 30 |
IRF153 |
33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs |
Intersil |
| | | |
