| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF230 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 2 |
IRF230 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 3 |
IRF230 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 4 |
IRF230 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 5 |
IRF230 |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 6 |
IRF230 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 7 |
IRF230 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET |
SemeLAB |
| 8 |
IRF230 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
| 9 |
IRF230-233 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 10 |
IRF230N |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 11 |
IRF231 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 12 |
IRF231 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 13 |
IRF231 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 14 |
IRF231 |
Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 15 |
IRF231 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 16 |
IRF231 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A |
Siliconix |
| 17 |
IRF231R |
Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 18 |
IRF232 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 19 |
IRF232 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 20 |
IRF232 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 21 |
IRF232 |
Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 22 |
IRF232 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 23 |
IRF232 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 8A |
Siliconix |
| 24 |
IRF232R |
Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 25 |
IRF233 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 26 |
IRF233 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 27 |
IRF233 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 28 |
IRF233 |
Trans MOSFET N-CH 150V 7.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 29 |
IRF233 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 30 |
IRF233 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 8A |
Siliconix |
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