| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF323 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 2 |
IRF323 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 3 |
IRF323 |
2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 4 |
IRF323 |
Trans MOSFET N-CH 350V 2.8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 5 |
IRF323 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| | | |
