| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF422 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 2 |
IRF422 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 3 |
IRF422 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 4 |
IRF422 |
Trans MOSFET N-CH 500V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 5 |
IRF422 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 6 |
IRF422R |
Trans MOSFET N-CH 500V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
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