| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF450 |
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET |
Fairchild Semiconductor |
| 2 |
IRF450 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 3 |
IRF450 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 4 |
IRF450 |
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET |
Intersil |
| 5 |
IRF450 |
N Channel MOSFET |
Microsemi |
| 6 |
IRF450 |
Trans MOSFET N-CH 500V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 7 |
IRF450 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 8 |
IRF450 |
N-CHANNEL POWER MOSFET |
SemeLAB |
| 9 |
IRF450 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 13A |
Siliconix |
| 10 |
IRF450R |
Trans MOSFET N-CH 500V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 11 |
IRF451 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
| 12 |
IRF451 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 13 |
IRF451 |
Trans MOSFET 450V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 14 |
IRF451 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 15 |
IRF451 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 13A |
Siliconix |
| 16 |
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 17 |
IRF452 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 18 |
IRF452 |
Trans MOSFET 500V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 19 |
IRF452 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 20 |
IRF452 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 12A |
Siliconix |
| 21 |
IRF452R |
Trans MOSFET 500V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 22 |
IRF453 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 23 |
IRF453 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 24 |
IRF453 |
Trans MOSFET 450V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 25 |
IRF453 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 26 |
IRF453 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 12A |
Siliconix |
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