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Datasheets found :: 5
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| No. | Part Name | Description | Manufacturer |
|---|---|---|---|
| 1 | IRF452 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. | General Electric Solid State |
| 2 | IRF452 | 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs | Intersil |
| 3 | IRF452 | Trans MOSFET 500V 12A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 4 | IRF452 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 5 | IRF452R | Trans MOSFET 500V 12A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
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Datasheets found :: 5
Page:
| 1 |
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