| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF510 |
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 2 |
IRF510 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 3 |
IRF510 |
N-channel power MOSFET, 100V, 5.6A |
Harris Semiconductor |
| 4 |
IRF510 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 5 |
IRF510 |
5.6A/ 100V/ 0.540 Ohm/ N-Channel Power MOSFET |
Intersil |
| 6 |
IRF510 |
Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 7 |
IRF510 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 8 |
IRF510-513 |
N-Channel Power MOSFETs/ 5.5 A/ 60-100V |
Fairchild Semiconductor |
| 9 |
IRF510A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
| 10 |
IRF510F |
Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 11 |
IRF510G |
Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 12 |
IRF510S |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13 |
IRF510STRL |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 14 |
IRF510STRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 15 |
IRF511 |
N-Channel Power MOSFETs/ 5.5 A/ 60-100V |
Fairchild Semiconductor |
| 16 |
IRF511 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 17 |
IRF511 |
N-channel power MOSFET, 80V, 5.6A |
Harris Semiconductor |
| 18 |
IRF511 |
Trans MOSFET N-CH 60V 4A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 19 |
IRF511 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 20 |
IRF512 |
N-Channel Power MOSFETs/ 5.5 A/ 60-100V |
Fairchild Semiconductor |
| 21 |
IRF512 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 3.5A. |
General Electric Solid State |
| 22 |
IRF512 |
N-channel power MOSFET, 100V, 4.9A |
Harris Semiconductor |
| 23 |
IRF512 |
Trans MOSFET N-CH 100V 3.5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 24 |
IRF512 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 25 |
IRF513 |
N-Channel Power MOSFETs/ 5.5 A/ 60-100V |
Fairchild Semiconductor |
| 26 |
IRF513 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 3.5A. |
General Electric Solid State |
| 27 |
IRF513 |
N-channel power MOSFET, 80V, 4.9A |
Harris Semiconductor |
| 28 |
IRF513 |
Trans MOSFET N-CH 60V 3.5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 29 |
IRF513 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
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