| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF610 |
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 2 |
IRF610 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 3 |
IRF610 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 4 |
IRF610 |
3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
| 5 |
IRF610 |
Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 6 |
IRF610 |
N-Channel Power MOSFET |
Samsung Electronic |
| 7 |
IRF610 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 2.5A |
Siliconix |
| 8 |
IRF610-613 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 9 |
IRF6100 |
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
| 10 |
IRF6100PBF |
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
| 11 |
IRF6100TR |
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
| 12 |
IRF610B |
200V N-Channel MOSFET |
Fairchild Semiconductor |
| 13 |
IRF610B_FP001 |
200V N-Channel B-FET / Substitute of IRF610 & IRF610A |
Fairchild Semiconductor |
| 14 |
IRF610B_FP001 |
200V N-Channel B-FET / Substitute of IRF610 & IRF610A |
Fairchild Semiconductor |
| 15 |
IRF610B_FP001 |
200V N-Channel B-FET / Substitute of IRF610 & IRF610A |
Fairchild Semiconductor |
| 16 |
IRF610PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 17 |
IRF610R |
Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 18 |
IRF610S |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 19 |
IRF610S |
Trans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
| 20 |
IRF610STRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 21 |
IRF610STRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 22 |
IRF611 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 23 |
IRF611 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 24 |
IRF611 |
Trans MOSFET N-CH 150V 2.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 25 |
IRF611 |
N-Channel Power MOSFET |
Samsung Electronic |
| 26 |
IRF611 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2.5A |
Siliconix |
| 27 |
IRF612 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 28 |
IRF612 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 29 |
IRF612 |
Trans MOSFET N-CH 200V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 30 |
IRF612 |
N-Channel Power MOSFET |
Samsung Electronic |
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