| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF721 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 2 |
IRF721 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 3 |
IRF721 |
TRANSISTORS N-CHANNEL |
International Rectifier |
| 4 |
IRF721 |
Trans MOSFET N-CH 350V 3.3A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 5 |
IRF721 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 6 |
IRF721 |
N-channel MOSFET, 350V, 3.3A |
SGS Thomson Microelectronics |
| 7 |
IRF721 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 3A |
Siliconix |
| 8 |
IRF7210 |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 9 |
IRF7210PBF |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 10 |
IRF7210TR |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 11 |
IRF721F1 |
N-channel MOSFET, 350V, 2.5A |
SGS Thomson Microelectronics |
| | | |
