| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF821 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 2 |
IRF821 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 3 |
IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 4 |
IRF821 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 5 |
IRF821 |
N-channel MOSFET, 450V, 2.5A |
SGS Thomson Microelectronics |
| 6 |
IRF821 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.5A |
Siliconix |
| 7 |
IRF821FI |
N-channel MOSFET, 450V, 2.0A |
SGS Thomson Microelectronics |
| | | |
