| No. |
Part Name |
Description |
Manufacturer |
| 1 |
27E040T-12 |
512K*8 bits high speed, low power electrically erasable EPROM |
Winbond Electronics |
| 2 |
BB857 |
Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance) |
Siemens |
| 3 |
Q62702-B0893 |
Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance) |
Siemens |
| 4 |
Q62702-B0897 |
Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance) |
Siemens |
| 5 |
TMM2018AP |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 6 |
TMM2018AP-25 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 7 |
TMM2018AP-35 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 8 |
TMM2018AP-45 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 9 |
TMM2063AP-10 |
100ns ; 80mA; V(cc): -0.5 to +7.0V; 0.8W; 65,536 bits high speed and low power static access memory |
TOSHIBA |
| 10 |
TMM2063AP-12 |
120ns ; 80mA; V(cc): -0.5 to +7.0V; 0.8W; 65,536 bits high speed and low power static access memory |
TOSHIBA |
| 11 |
TMM2063AP-70 |
70ns ; 80mA; V(cc): -0.5 to +7.0V; 0.8W; 65,536 bits high speed and low power static access memory |
TOSHIBA |
| 12 |
UT8Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V. |
Aeroflex Circuit Technology |
| 13 |
UT9Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V and 5V. |
Aeroflex Circuit Technology |
| 14 |
W27C020-70 |
256K*8 bits high speed, low power electrically erasable EPROM |
Winbond Electronics |
| | | |
