| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 2 |
2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 3 |
2SA1432 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. |
TOSHIBA |
| 4 |
2SA1721 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 5 |
2SA429G |
Silicon NPN triple diffused planar transistor, Nixie Tube Driver applications, high voltage Switching applications |
TOSHIBA |
| 6 |
2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 7 |
2SC3515 |
Transistor Silicon NPN Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 8 |
2SC3672 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL APPLICATIONS, PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS |
TOSHIBA |
| 9 |
2SC3933 |
For UHF amplification/mixing |
Panasonic |
| 10 |
2SC780AG |
Silicon NPN triple diffused planar transistor, Nixie tube driver, high voltage switching applications |
TOSHIBA |
| 11 |
ADN2841ACP-48-RL7 |
7V; dual-loop 50Mbps-2.7Gbps laser diode driver. For DWDM dual MPD wavelength fixing, SONET OC-1/3/12/48, SDH STM-1/4/16, fiber channel, gigabit ethernet |
Analog Devices |
| 12 |
AF135 |
Germanium PNP junction transistor, VHF mixing stage |
TELEFUNKEN |
| 13 |
AT83EC5123XXX-SIXIM |
Microcontroller with USB and smart card reader interface. Memory size 30K bytes ROM + 512 bytes EEPROM. Supply voltage 3.6-5.5 V. Max frequency 32 MHz. |
Atmel |
| 14 |
AT85EC5122-SIXIM |
Microcontroller with USB and smart card reader interface. Memory size 32K bytes ROM + 512 bytes EEPROM. Supply voltage 3.6-5.5 V. Max frequency 32 MHz. |
Atmel |
| 15 |
BAS140 |
Silicon Schottky Diode (General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 16 |
BAS140W |
Silicon Schottky Diode (General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 17 |
BAS70 |
-Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 18 |
BAS70 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 19 |
BAS70 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 20 |
BAS70 |
-Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 21 |
BAS70-04 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 22 |
BAS70-05 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 23 |
BAS70-06 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 24 |
BAS70-07W |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 25 |
BFY65 |
Silicon NPN epitaxial planar transistors with high collector base voltage for nixie drivers |
AEG-TELEFUNKEN |
| 26 |
BFY80 |
Silicon NPN epitaxial planar transistors with high collector base voltage for nixie drivers |
AEG-TELEFUNKEN |
| 27 |
CE1048 |
High and medium voltage electrolytic capacitor with nut fixing |
IPRS Baneasa |
| 28 |
CE1049 |
High and medium voltage electrolytic capacitor with terminal fixing |
IPRS Baneasa |
| 29 |
GF145 |
Germanium PNP MESA Transistor, mixing and oscillator stages up to 860MHz |
RFT |
| 30 |
GF147 |
Germanium PNP MESA Transistor, for pre-mixing and oscillator stages up to 900MHz, collector isolated from the case |
RFT |
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