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Datasheets for IZE

Datasheets found :: 39399
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 0-1462000-1 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil Tyco Electronics
2 0-1462000-7 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil Tyco Electronics
3 0405-100 Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W SGS Thomson Microelectronics
4 0405-30 Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W SGS Thomson Microelectronics
5 0608-020 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz SGS Thomson Microelectronics
6 0608-070 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics SGS Thomson Microelectronics
7 0710-300 High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications SGS Thomson Microelectronics
8 1-1462000-3 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil Tyco Electronics
9 1-1462000-8 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil Tyco Electronics
10 1-1462001-1 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil Tyco Electronics
11 1-1462001-2 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil Tyco Electronics
12 1313 Metallized Polyester Electronic Film Capacitors
13 13PD100-S The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... Anadigics Inc
14 13PD150-S The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... Anadigics Inc
15 1416-1 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
16 1416-3 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
17 1474 Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz SGS Thomson Microelectronics
18 1511-8 Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz SGS Thomson Microelectronics
19 1526-1 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
20 1526-8 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
21 1527-8 Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications SGS Thomson Microelectronics
22 163CNQ060 The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature International Rectifier
23 163CNQ080 The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature International Rectifier
24 163CNQ090 The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature International Rectifier
25 163CNQ100 The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature International Rectifier
26 194D Solid Tantalum Chip Capacitors, Conformal, High Reliability, MIDGET® Solid-Electrolyte, New Extended Range, Minimum Size Vishay
27 195D Solid Tantalum Chip Capacitors, Conformal, Industrial Grade, TANTAMOUNT® Tantalum Chips with Conformal Terminals, Minimum size, Meets IEC Specification QC300801/US0002, 2 Standard Electroplate Terminations Vishay
28 1N100 Optimized for Radio Frequency Response Microsemi
29 1N4728A Zener Diodes for Stabilized Power Supply Hitachi Semiconductor
30 1N4729A Zener Diodes for Stabilized Power Supply Hitachi Semiconductor


Datasheets found :: 39399
Page: | 1 | 2 | 3 | 4 | 5 |



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