| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N3055_MJ2955 |
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS |
Motorola |
| 2 |
HJ2955 |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 3 |
J2955 |
Mini size of Discrete semiconductor elements |
SINYORK |
| 4 |
MJ2955 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 5 |
MJ2955 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 6 |
MJ2955 |
115.000W Power PNP Metal Can Transistor. 60V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 7 |
MJ2955 |
Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W. |
General Electric Solid State |
| 8 |
MJ2955 |
POWER TRANSISTORS(15A,50V,115W) |
MOSPEC Semiconductor |
| 9 |
MJ2955 |
Complementary silicon power transistor |
Motorola |
| 10 |
MJ2955 |
PNP Power Transistor TO-3 |
National Semiconductor |
| 11 |
MJ2955 |
Power 15A 60V Discrete PNP |
ON Semiconductor |
| 12 |
MJ2955 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
| 13 |
MJ2955 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
| 14 |
MJ2955 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
| 15 |
MJ2955 |
Silicon PNP power transistor in Jedec TO-3 metal case |
SGS-ATES |
| 16 |
MJ2955 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
ST Microelectronics |
| 17 |
MJ2955 |
PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. |
USHA India LTD |
| 18 |
MJ2955 |
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 19 |
MJ2955A |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 20 |
MJ2955A |
POWER TRANSISTORS(15A) |
MOSPEC Semiconductor |
| 21 |
MJ2955A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS |
Motorola |
| 22 |
MJ2955A |
Trans GP BJT NPN 60V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 23 |
MJ2955A |
Silicon PNP Power Transistors TO-3 package |
Savantic |
| 24 |
NX8560LJ295-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. FC-UPC connector. |
NEC |
| 25 |
NX8560LJ295-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. SC-UPC connector. |
NEC |
| 26 |
NX8560SJ295-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1529.553 nm. Frequency 196.00 THz. FC-UPC connector. |
NEC |
| 27 |
NX8560SJ295-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1529.553 nm. Frequency 196.00 THz. SC-UPC connector. |
NEC |
| 28 |
PJ2950ACT |
-20 to +60V; 150mA low dropout voltage regulator. For battery powered systems, portable instrumentation, avionics, automotive electronics, SMPS post-regulator, voltage reference, portable/lamp top/notebook computers, portable consumer equi |
PROMAX-JOHNTON |
| 29 |
PJ2950ACT-3.0 |
-20 to +60V; 150mA low dropout voltage regulator. For battery powered systems, portable instrumentation, avionics, automotive electronics, SMPS post-regulator, voltage reference, portable/lamp top/notebook computers, portable consumer equi |
PROMAX-JOHNTON |
| 30 |
PJ2950ACT-3.3 |
-20 to +60V; 150mA low dropout voltage regulator. For battery powered systems, portable instrumentation, avionics, automotive electronics, SMPS post-regulator, voltage reference, portable/lamp top/notebook computers, portable consumer equi |
PROMAX-JOHNTON |
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