| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SJ342 |
Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Applications |
TOSHIBA |
| 2 |
GT50J342 |
Discrete IGBT |
TOSHIBA |
| 3 |
NX8560LJ342-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1534.25 nm. Frequency 195.40 THz. FC-UPC connector. |
NEC |
| 4 |
NX8560LJ342-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1534.25 nm. Frequency 195.40 THz. SC-UPC connector. |
NEC |
| 5 |
NX8560SJ342-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1534.250 nm. Frequency 195.40 THz. FC-UPC connector. |
NEC |
| 6 |
NX8560SJ342-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1534.250 nm. Frequency 195.40 THz. SC-UPC connector. |
NEC |
| | | |
